详细说明：
SuperjunctionMOSFET英国进口
北京特博万德科技有限公司独家代理英国ICEMOSTECH的高品质SOI wafer和SuperJunction MOSFET。
SOI wafer尺寸:4”(100mm）, 5”（125mm）, 6”（150mm） and 8"（200mm）
SOI Spec. 规格：
1- Bonded SOI wafer (绝缘硅上键合硅片）
For 4”(100mm）, 5”（125mm）, 6”（150mm）
---- Handle wafer minimum 300um maximum 1000um,
---- Buried Oxide, minimum 0.1 um, maximum 4 um,
---- Device layer minimum 2 um, max 500 um.
For 8"（200mm）
---- Handle thickness minimum 500um and maximum 675um,
---- Buried Oxide minimum 0.1 um, maximum 4 um,
---- Device layer minimum 5 um, maximum 500 um.
2- Si-Si direct wafer bonding (replacement for epi) 硅-硅直接键合，可替代外延片
100mm, 125mm, 150mm and 200mm, thickness as specified above.
3- Engineered SOI, Double SOI (DSOI), Trench Isolation SOI (dielectric isolation),
Cavity SOI (for pressure sensor, gyro and accelerometer sensor, microfludic etc.)
and finally Through Silicon Via (TSV)
---- Cavity SOI - Bonded SOI or Silicon silicon DWB wafers with cavities performed within the wafer
---- Multiple SOI 2 or 3 or more layers of SOI designed around your process
---- Structured wafers silicon wafers or SOI with buried electrode layers, vias, interconnect already incorporated
4- SOI + Trench & Refill
Features
- Significant die shrink compared to conventional dielectric isolation
(DI) or junction isolation
- Bulk quality top silicon layer
- Total device-to-device isolation
- Lower substrate capacitance than bulk
- Fully flexible specification on SOI, Trench and refill parameters
5- Superjunction MOSFET
为了一些客户的紧急需求，英国工厂存有部分现货！
欢迎您来电咨询更详细的产品信息！
产品名称：【供应】英国ICEMOS公司SOI硅片
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