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BFP540FESD
  • 所属分类:数据手册
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  • 上传日期:2016-09-02
  • 资料类型:application/pdf
  • BFP540FESD
资料介绍

Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
• Excellent ESD performance
typical value 1000 V (HBM)
• Outstanding Gms = 20 dB
Minimum noise figure NFmin = 0.9 dB
• Pb-free (ROHS compliant) and halogen-free thin small
flat package with visible leads
• Qualification report according to AEC-Q101 available

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