Features
• Robust very low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
• 2 kV ESD robustness (HBM) due to integrated protection circuits
• High maximum RF input power of 21 dBm
• 0.60 dB minimum noise figure typical at 2.4 GHz,
0.8 dB at 5.5 GHz, 6 mA
• 26 dB maximum gain Gms typical at 2.4 GHz,
20.5 dB Gma at 5.5 GHz, 25 mA
• 23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
• Thin small flat Pb-free (RoHS compliant) and halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available

Applications
As Low Noise Amplifier (LNA) in
• Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
and C-band LNB
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• 3G/4G UMTS/LTE mobile phone applications
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCOs and buffer amplifier
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions