Features
 Integrated gate drivers and bootstrap functionality
 Suitable for sinusoidal or trapezoidal modulation
 Low RDS(on) Trench FREDFET
 Under-voltage lockout for both channels
 Matched propagation delay for all channels
 Optimized dV/dt for loss and EMI trade offs
 3.3V input logic compatible
 Active high HIN and LIN
 Isolation 1500VRMS min